Non-local architecture for spin current manipulation in silicon platforms

We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally generated the indirect gap of by means circularly polarized light then detected exploiting inverse spin-Hall effect (ISHE) occurring inside thin Pt pad deposited top substrate. demonstrate that it is possible to modulate transport properties optically injected applying bias voltage along direction motion particles. In this case, we able explore both diffusion regime, characterized length L s ≈ 12 μm, drift regime with applied electric fields up E = 35 V/cm. electrons can be increased (or decreased) more than 100% antiparallel parallel) direction. As consequence, ISHE signal electrically controlled high or low output voltages from device.